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Hot-carrier degradation mechanism for p-type symmetric LDMOS transistor with thick gate oxide

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5 Author(s)
Siyang Liu ; Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China ; Weifeng Sun ; Weijun Wan ; Qinsong Qian
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Hot-carrier-induced degradation in the p-type symmetric lateral DMOS transistor (ps-LDMOS) with thick gate oxide has been experimentally investigated. It is noted that only one peak bulk current is observed for different Vgs owing to the Kirk effect hardly happening in the ps-LDMOS. Experimental results also show that interface state generates in the channel and p-drift regions; however, hot electron injection and trapping into the oxide of the p-drift region dominates the degradation, leading to the on-resistance (Ron) decrease. Moreover, no hot-carrier injection is found in the channel region. Charge pumping measurements and T-CAD simulations have been performed to verify the experimental findings.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 24 )