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Graded Bit-Error-Correcting Codes With Applications to Flash Memory

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3 Author(s)
Gabrys, R. ; Univ. of California at Los Angeles, Los Angeles, CA, USA ; Yaakobi, E. ; Dolecek, L.

Flash memory is a promising new storage technology. Supported by empirical data collected from a Flash memory device, we propose a class of codes that exploits the asymmetric nature of the error patterns in a Flash device using tensor product operations. We call these codes graded bit-error-correcting codes. As demonstrated on the data collected from a Flash chip, these codes significantly delay the onset of errors and therefore have the potential to prolong the lifetime of the memory device.

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Information Theory, IEEE Transactions on  (Volume:59 ,  Issue: 4 )