Cart (Loading....) | Create Account
Close category search window

Fabrication and Characterization of Flexible Microwave Single-Crystal Germanium Nanomembrane Diodes on a Plastic Substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Guoxuan Qin ; Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China ; Hao-Chih Yuan ; Yuechen Qin ; Jung-Hun Seo
more authors

This letter presents the fabrication and characterization of flexible microwave p-intrinsic-n diodes on a plastic substrate employing single-crystal germanium (Ge) nanomembranes. The fabricated flexible device displays high frequency response (e.g., insertion loss smaller than 1.5 dB and isolation larger than 10 dB at frequencies up to 10 GHz). Flexible Ge diodes with various diode structures are modeled and reveal radio frequency (RF) performance tradeoff with device parameters. Furthermore, the flexible Ge diodes show better RF/microwave properties than the flexible Si diodes. The study demonstrates great potential of using flexible active/passive components based on single-crystal Ge nanomembrane for high-performance RF/microwave applications.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 2 )

Date of Publication:

Feb. 2013

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.