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Study on a Metal–Insulator–Silicon Hydrogen Sensor With LaTiON as Gate Insulator

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3 Author(s)
Yu, J. ; Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, ; Chen, G. ; Lai, P.T.

In this paper, by using a metal–insulator–semiconductor Schottky-diode structure, we examined the electrical and hydrogen-sensing properties of radio frequency sputtered LaTiON thin films that had been annealed at four different temperatures (450$^{circ}{rm C}$, 550 $^{circ}{rm C}$, 650$^{circ}{rm C}$, and 750$^{circ}{rm C}$). Characterization of their morphological surface indicates that their average surface roughness decreases from 0.108 to 0.090 nm with increasing annealing temperature. X-ray diffraction shows the growths of La and Ti are in the 1 0 0 direction, i.e., in parallel to the Si substrate. Analysis of measured electrical characteristics indicates that thermionic emission is the dominant mechanism at low temperatures (from RT to 150$^{circ}{rm C}$), while Poole–Frenkel emission plays an important role at high temperatures (above 150 $^{circ}{rm C}$) in the electrical conduction. Results suggest that the sample annealed at 650$^{circ}{rm C}$ has the most promising hydrogen-sensing performance (better current–voltage characteristics, higher sensitivity of 2.0 at 100$^{circ}{rm C}$) among the four samples.

Published in:

Sensors Journal, IEEE  (Volume:13 ,  Issue: 5 )