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Material and Structure Designs for Reliable Quad-Flat-Package for Scaled-Down Ultralarge-Scale Integrations With Porous Low- k/{\rm Cu} Interconnects

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4 Author(s)
Tagami, M. ; LSI Res. Lab., Renesas Electron. Corp., Sagamihara, Japan ; Ito, F. ; Inoue, N. ; Hayashi, Y.

Reliability of a quad-flat-package (QFP) with a circuit-under-pad (CUP) structure is investigated for Cu interconnects with porous low dielectric constant (low-k) films in scaled-down ultralarge-scale integrations. The following experimental factors are discussed: 1) low-k material properties and their stacking structures; 2) CUP structure; and 3) mold compound material properties. The QFP characteristics are analyzed after chip dicing and Ag wire bonding, as well as after molding. Higher adhesion strength of porous low-k film to SiCN cap dielectrics and rigid Cu-anchored CUP structure can achieve highly reliable QFP packaging. A lower coefficient of thermal expansion (CTE) of the molding compound is also found to be effective in eliminating low-k delamination during thermal cycle test because it can reduce the stress at the cracking position. The adhesion-promoting porous SiOCH film with the Cu-anchored CUP in a low-CTE mold is a promising system to realize a reliable QFP with no low-k delamination, passing electrical tests after the pressure-cooker test and high-temperature storage test.

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Components, Packaging and Manufacturing Technology, IEEE Transactions on  (Volume:3 ,  Issue: 3 )