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In this work, the advantages of the p-InGaN/AlGaN electron blocking layer (EBL) for InGaN/GaN light-emitting diodes (LEDs) were studied numerically and experimentally. The LEDs with p-InGaN/AlGaN EBL exhibited better optical performance over a wide range of carrier concentration due to the enhancement of holes' injection and electrons' confinement. The values of A, B, C, and D coefficients had been iteratively obtained by fitting quantum efficiency in the modified rate equation model. The analysis indicated that the improvement in the device properties could be attributed to the relatively small band gap and p-type doping of InGaN insertion layer.