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Fabrication of \hbox {Nb/Al}_{2}\hbox {O}_{3}/\hbox {Nb} Josephson Junctions Using In Situ Magnetron Sputtering and Atomic Layer Deposition

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13 Author(s)
Rongtao Lu ; Dept. of Phys. & Astron., Univ. of Kansas, Lawrence, KS, USA ; Elliot, A.J. ; Wille, L. ; Bo Mao
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Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on an Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics of the Josephson junctions made from these trilayers confirmed the integrity of the ALD-Al2O3 barrier layer. However, the IcRN product of the junctions is much smaller than the value expected from the Ambegaokar-Baratoff formula suggesting a significant pair-breaking mechanism at the interfaces.

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Applied Superconductivity, IEEE Transactions on  (Volume:23 ,  Issue: 3 )