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Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices

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9 Author(s)
Gautam, N. ; Univ. of New Mexico, Albuquerque, NM, USA ; Myers, S. ; Barve, A.V. ; Klein, B.
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We present the design, growth, fabrication, and characterization of unipolar barrier photodiodes, pBiBn, based on type-II InAs/GaSb superlattice for midwave and longwave infrared detection. Design optimization of barriers using bandgap and band-offset tailorability of InAs/GaSb/AlSb superlattice system, their advantages and evolution of heterostructure designs are discussed for both the regimes. Dark current densities of 1.6 × 10-7 and 1.42 × 10-5 A/cm2 are measured at 77 K for midwave and longwave detectors with cutoff wavelengths of 5 and 10 μm, respectively. Responsivities of 1.3 (QE = 38%) and 1.66 A/W (QE = 23.5%) are measured at 4.2 and 8.7 μm for the midwave and longwave, respectively, at 77 K. Shot noise limited peak detectivity of 8.9 × 1012 and 7.7×1011 cm-Hz1/2-W-1 are observed at -10 and -40 mV for midwave infrared and longwave infrared detectors, respectively, at 77 K.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:49 ,  Issue: 2 )