Cart (Loading....) | Create Account
Close category search window
 

Through-Silicon-Via Fabrication Technologies, Passives Extraction, and Electrical Modeling for 3-D Integration/Packaging

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zheng Xu ; Rensselaer Polytech. Inst., Troy, NY, USA ; Jian-Qiang Lu

Major advances have been made in the processing technologies of through-silicon-vias (TSVs) because TSV is an essential element for both wafer-level 3-D integration and packaging-based 3-D integration, due to its short interconnect length, high interconnect density, and small footprint. Based on a review of current TSV technologies, this paper reports a number of recently developed extraction techniques to investigate TSV parasitics using a 3-D fullwave electromagnetic (EM) simulator, a SPICE simulator, and empirical calculations. All the TSV RLGC values extracted from the fullwave simulation are in good agreement with those from different approaches over the entire frequency range of interest. The proposed empirical calculations indicate close results to fullwave extraction, thus TSV can be accurately modeled as lump elements. A wideband SPICE model for circuit design is generated from the TSV EM solution with good matching for both magnitudes and phases of return loss and insertion loss. Sensitivity analysis results further indicate that the insulating layer thickness weighs most in signal gain at 20 GHz. As an application of the modeling approaches is developed, a novel coaxial TSV with superior electrical performance is proposed, and its latency and power are examined. This paper provides some insight into TSV electrical characteristics and physical design to maximize the benefits of 3-D systems.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:26 ,  Issue: 1 )

Date of Publication:

Feb. 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.