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A highly sensitive 120 GHz integrated dielectric sensor in SiGe BiCMOS with back-side etching is presented. The sensor consists of a bandpass filter using a planar resonator, a 120 GHz VCO at the input, and a power detector at the output. The sensitivity of the stand-alone resonator and the sensor was tested by measuring the change in the detector output voltage and the shift in the frequency response of the resonator due to a dielectric sample placed over the resonator. Simulated and measured performance of the developed device are presented and discussed.