Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlOX Gate Insulator

We demonstrate low-voltage-driven complementary metal-oxide-semiconductor (CMOS) circuits using ink-jet-printed N, N' bis-(octyl-) - dicyanoperylene - 3, 4 : 9, 10 - bis(dicarboximide) (PDI8CN2) for the n-channel TFT and 6,13-bis(triisopropylsilyl-ethynyl)pentacene (TIPS-pentacene) for the p-channel TFT with a solution-processed AlO
_X
gate dielectric. The CMOS inverter shows a gain of -95.3 V/V at
V
_DD
of 2.5 V, and the ink-jet-printed seven-stage CMOS ring oscillator exhibits an oscillation frequency of 31.8 Hz and a propagation delay time of 2.24 ms/stage at
V
_DD
of 4 V.