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We present experimental results on the fabrication and characterization of vertical Si tunneling field-effect transistors (TFETs) in a device geometry with tunneling in line with the gate field. Compared to vertical Si TFETs without this geometry modification, on-currents are increased by more than one order of magnitude with ION = 1.1 μA/μm at VDS = 0.5 V and an ION/IOFF ratio of 3.4 ·104 in n-channel operation. We present further suggestions for device improvements.
Date of Publication: Feb. 2013