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Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure

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2 Author(s)
Hsu, Chia-Ming ; Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan ; Hwu, Jenn-Gwo

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4772986 

The electrical performance of SiC-based devices is strongly affected by the border traps of high-k dielectrics and carbon (C) interstitials in SiC. The abrupt HfO2/ SiC junction exhibits frequency dispersion in capacitance–voltage (C-V) curves. The thin SiO2 (7.5 nm) sample that is without excess C clusters exhibits ideal C-V characteristics. With the increase of SiO2 thickness, excess C in SiC substrates is detected by using both auger electron spectroscopy and x-ray photoelectron spectroscopy. The thick SiO2 (15.5 nm) sample contains enormous excess C inside SiC close to SiO2 interface, and excess C changes the substrates to n+-like behavior.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 25 )

Date of Publication:

Dec 2012

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