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Due to voltage drops across parasitic resistances in semiconductor devices, extracted performance parameters can be strongly dependent on the geometrical structure. In this letter, we report a characterization technique for the intrinsic field-effect mobility μFEo in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by de-embedding the parasitic source and drain resistances RS and RD, respectively. We obtained the channel-length (L) -independent intrinsic field-effect mobility μFEo from TFTs with various channel lengths on the same wafer. We expect that this characterization technique for L-independent intrinsic field-effect mobility is useful for accurate characterization, consistent modeling, and robust simulation of a-IGZO TFT circuits.