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Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances

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11 Author(s)
Inseok Hur ; School of Electrical Engineering, Kookmin University, Seoul, Korea ; Hagyoul Bae ; Woojoon Kim ; Jaehyeong Kim
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Due to voltage drops across parasitic resistances in semiconductor devices, extracted performance parameters can be strongly dependent on the geometrical structure. In this letter, we report a characterization technique for the intrinsic field-effect mobility μFEo in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by de-embedding the parasitic source and drain resistances RS and RD, respectively. We obtained the channel-length (L) -independent intrinsic field-effect mobility μFEo from TFTs with various channel lengths on the same wafer. We expect that this characterization technique for L-independent intrinsic field-effect mobility is useful for accurate characterization, consistent modeling, and robust simulation of a-IGZO TFT circuits.

Published in:

IEEE Electron Device Letters  (Volume:34 ,  Issue: 2 )