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Effect of the number of quantum dot layers and dual state emission on the performance of InAs/InGaAs passively mode-locked lasers

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7 Author(s)
Mesaritakis, Charis ; Department of Informatics and Telecommunications, National and Kapodistrian University of Athens, Panepistimiopolis Illisia, Athens 15784, Greece ; Simos, Christos ; Simos, Hercules ; Kapsalis, Alexandros
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In this paper, a series of quantum-dot passively mode-locked Fabry-Perot lasers has been experimentally investigated. The devices vary in terms of number of quantum dot layers, thus allowing the extraction of guidelines regarding the impact of this parameter on the quality of mode locking. Although, theoretical estimations imply that the increase of the quantum dot layers can enhance the emitted optical power but degrade mode-locking stability, the experimental evaluation proved that the existence of dual wavelength emission can affect this trend and allow better performance from devices that do not exhibit excited state emission.

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Applied Physics Letters  (Volume:101 ,  Issue: 25 )