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Browse Conference Publications > Epitaxial Materials and In-Si ... Help

Fabrication Of Monolithic Two-dimensional Surface-emitting Strained-layer InGaAs/AiGaAs And AllnGaAs/AiGaAs Diode-laser Arrays With Over 50% Differential Quantum Efficiencies

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7 Author(s)
Goodhue, W.D. ; Massachusetts Institute of Technology ; Donnelly, J.P. ; Wang, C.A. ; Lincoln, G.A.
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First Page of the Article

Published in:
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on

Date of Conference: 29 Jul-2 Aug 1991

Page(s):
53 - 54
Print ISBN:
0-87942-618-7
Digital Object Identifier :
10.1109/LEOSST.1991.639016
Product Type:
Conference Publications

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