By Topic

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
11 Author(s)
Coquand, R. ; Univ. de Grenoble, Grenoble, France ; Casse, M. ; Barraud, S. ; Cooper, D.
more authors

A detailed study of performance in uniaxially strained Si nanowire (NW) transistors fabricated by lateral strain relaxation of biaxial strained-SOI (sSOI) substrate is presented. Two-dimensional strain imaging demonstrates the lateral strain relaxation resulting from nanoscale patterning. An improvement of electron mobility in sSOI NW scaled down to 10-nm width is successfully demonstrated (+55 % with respect to SOI NW) due to remaining uniaxial tensile strain. This improvement is maintained even by using hydrogen annealing to form an Omega gate. For short gate length, a strain-induced ION gain as high as +40% at LG = 45 nm is achieved for a multiple-NW active pattern.

Published in:

Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 2 )