Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Design and Fabrication of All-NbN SFQ Circuits for SSPD Signal Processing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Makise, K. ; Adv. ICT Inst., Nat. Inst. of Inf. & Commun. & Technol., Kobe, Japan ; Terai, H. ; Miki, S. ; Yamashita, T.
more authors

We have developed an all-NbN integrated circuit technology for future integration of single flux quantum (SFQ) circuit with superconducting single-photon detector array. The all-NbN integrated circuits consist of epitaxial NbN/AlN/NbN tunnel junctions fabricated on single-crystal MgO substrates, Mo shunt resistors and 500-nm-thick NbN ground plane on the top. Critical current density and sheet resistance of the Mo resistor were set at 2.5 kA/cm2 and 1.2 Ω, respectively. Current uniformity of the NbN/AlN/NbN tunnel junctions was measured to be σ = 3% for 3 μm × 3 μm junction size. The NbN-based SFQ logic cells were designed for and tested at 4.2 K. We actually measured circuit inductances of the fabricated SFQ cells. Circuit simulation revealed that the measured circuit inductances in the fabricated SFQ cells should allow operating margins of more than +/-20%.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:23 ,  Issue: 3 )