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Photodetection With Gate-Controlled Lateral BJTs From Standard CMOS Technology

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5 Author(s)
Fernando de Souza Campos ; Electrical Engineering Department, Sao Paulo State University, Bauru, Brazil ; Naser Faramarzpour ; Ognian Marinov ; M. Jamal Deen
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The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 10^{6} at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18- \mu{\rm m} triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 \mu{\rm m} /2 \mu{\rm m} and a total area of {\sim}{\rm 500}~\mu{\rm m}^{2} are used. When using this area, the responsivities are 16–20 kA/W.

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IEEE Sensors Journal  (Volume:13 ,  Issue: 5 )