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Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons

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6 Author(s)
Cowan, V.M. ; Air Force Research Laboratory, Space Vehicles Directorate, 3550 Aberdeen Ave. SE, Kirtland AFB, New Mexico 87117, USA ; Morath, C.P. ; Hubbs, J.E. ; Myers, S.
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The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence ΦP up to 3.75 × 1012 cm-2 or, equivalently, a total ionizing dose = 500 kRad (Si). At this ΦP, an ∼31% drop in quantum efficiency η, ∼2 order increase in dark current density JD, and consequently, >1 order drop in calculated detectivity D* were observed. Proton damage factors were determined for η and D*. Arrhenius-analysis of temperature-dependent JD measurements reflected significant changes in the activation energies following irradiation.

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Applied Physics Letters  (Volume:101 ,  Issue: 25 )