By Topic

Reduction Of Residual Oxygen Incorporation In High-power Single Quantum Well Lasers Grown By Molecular Beam Epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ovadia, S. ; IBM East Fishkill Facility ; Meier, H.P. ; Iyer, S.V. ; Parks, C.

First Page of the Article

Published in:

Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on

Date of Conference:

29 Jul-2 Aug 1991