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New Method of EMI analysis in power electronics based on semiconductors transient models: Application to SiC MOSFET/Schottky diode

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4 Author(s)
Slim Hrigua ; SATIE, ENS Cachan, 61, Av Président Wilson, 94235 Cedex, France ; Fran├žois Costa ; Cyrille Gautier ; Bertrand Revol

Proven by both academia and industry, silicon carbide (SiC) semiconductors become ready to replace their silicon (Si) counterparts in power electronics. However, since they operate under high electrical constraints and at high switching frequencies, electromagnetic interference (EMI) level becomes higher. As a consequence, developing new modeling methods that require low time consumption, able to reconstruct accurately the transient behavior of a switching cell becomes a necessity. In this paper, a new modeling method based on configurable partial transfer functions (CPTFs) is proposed. This method allows an ultrafast accurate reconstruction of transient waveforms and an accurate EMI sources identification in both temporal and frequency domains. The parameters used to fill these CPTFs are identified by measurement or directly from the manufacturer technical files. The obtained results are verified by comparing simulations with experimental switching waveforms.

Published in:

IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society

Date of Conference:

25-28 Oct. 2012