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Characterization and application of next-generation SiC power devices for high-frequency isolated bidirectional DC-DC converter

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4 Author(s)
Biao Zhao ; Tsinghua Univ., Beijing, China ; Qiang Song ; Wenhua Liu ; Yandong Sun

In this paper, the application performance characteristics of high-frequency isolated bidirectional DC-DC converter (IBDC) based on SiC-DMOS and SiC-SBD samples provided by ROHM SEMICONDUCTOR Inc. are analyzed. The paper gave the basic design procedure of SiC-based converter, and established the mathematical model of power losses by analyzing the switching characteristic of the converter. On this basis, the power loss and efficiency characteristics of the SiC-based converter were analyzed and the related experimental results were presented. Theoretical analysis and experimental results show that the SiC-based converter has better performance than the Si-based converter; it will have a wide application prospect in the future smart electricity network.

Published in:

IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society

Date of Conference:

25-28 Oct. 2012