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Transistor aging is a major reliability concern for nanoscale CMOS technology that can significantly reduce the operation lifetime of very large-scale integration chips. Negative bias temperature instability (NBTI) is a major contributor to transistor aging that affects pMOS transistors. On the other hand, leakage power is becoming a dominant factor of the total power with successive technology scaling. Since the input combinations applied to a logic core have a significant impact on both NBTI and leakage power, input vector control can be used to optimize both phenomena during idle cycles. In this paper, we present an efficient input vector selection technique based on linear programming for cooptimizing the NBTI-induced delay degradation and leakage power consumption during standby mode. Since the NBTI-induced delay degradation and leakage power are not affected by the input vector in the same direction, we provide a pareto curve based on both phenomena. A suitable point from such a pareto curve is chosen based on circuit conditions and requirements during runtime.