We investigated the electrical behavior of n–n Ge-Si isotype heterojunction diodes prepared by surfactant-mediated epitaxy of relaxed n-Ge layers on (100) n-Si substrates. Current-voltage characteristics were measured at different temperatures between 10 °C and 90 °C. The experimental results were interpreted with a new heterojunction model based on Shockley-Read-Hall kinetics for electron and hole capture/emission at the interface traps, which describes the bias dependent interface and semiconductor charges, the trap-mediated currents, and the thermionic electron transmission current. The modeled thermionic electron emission current was in excellent agreement with the experimental current-voltage characteristics in the whole temperature range for negative (≥-0.5 V) and positive (≤0.1 V) Ge biases. Trap-mediated currents were much smaller for reasonable trap capture cross sections σ ≤ 10-14cm2. From the experimental data, we extracted an electron barrier height of 0.59 eV at room temperature and an effective density of interface traps of only 5·1012cm-2eV-1 near the Si midgap. The charge carrier exchange between these traps with the Ge side was found to be much more efficient than with the Si side. The presence of a hole inversion layer at the interface proved to be essential for the interpretation of the heterojunction characteristics.