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Dielectric Stacking Effect of \hbox {Al}_{2} \hbox {O}_{3} and \hbox {HfO}_{2} in Metal–Insulator–Metal Capacitor

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4 Author(s)
In-Sung Park ; Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea ; Kyoung-min Ryu ; Jaehack Jeong ; Jinho Ahn

The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )

Date of Publication:

Jan. 2013

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