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160 GHz Passively Mode-Locked AlGaInAs 1.55 μm Strained Quantum-Well Lasers With Deeply Etched Intracavity Mirrors

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6 Author(s)
Lianping Hou ; Sch. of Eng., Univ. of Glasgow, Glasgow, UK ; Avrutin, E.A. ; Haji, M. ; Dylewicz, R.
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We have characterized the reflectivity, modal discrimination, and passive mode locking performance of diode lasers with intracavity reflectors (ICR) composed of a different number of slots. Upon analysis, we demonstrate that a monolithic semiconductor mode-locked laser comprising a compound cavity formed by a single deeply etched ICR slot fabricated using the 1.55 μm AlGaInAs strained quantum-well material provides the best harmonic (M = 4) mode-locking performance, with Gaussian-pulses generated at a pulse repetition rate of 161.8 GHz and a pulse duration of 1.67 ps, providing a time-bandwidth product of 0.81.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:19 ,  Issue: 4 )

Date of Publication:

July-Aug. 2013

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