Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

In n-channel nanoscale tri-gate fin-shaped field-effect transistors with high-k gate dielectric stack, the 1/f noise is investigated, ascribed to the carrier number fluctuations with correlated mobility fluctuations. The overall results show that the gate dielectric trap density is uniform in both top-gate and side-gates and the product Ω=α_scμ_effC_ox of the Coulomb scattering coefficient α_sc, the effective carrier mobility μ_eff and the gate oxide capacitance per unit area C_ox increase with decreasing the fin thickness due to enhancement of side-gates interface roughness effects.