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Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method

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8 Author(s)
Biqing Wu ; Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, China ; Siqi Lin ; Tien-Mo Shih ; Yulin Gao
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A method is presented in this study to determine the junction temperature (Tj) of LED in terms of the relationship between the diode reverse current (IR) and Tj . A theoretical model for the dependence of IR on Tj is derived on the basis of the Shockley equation and is validated by our experimental results. The method is compared with the conventional forward voltage method, and its advantages have been identified.

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IEEE Transactions on Electron Devices  (Volume:60 ,  Issue: 1 )