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Large-Swing-Tolerant ESD Protection Circuit for Gigahertz Power Amplifier in a 65-nm CMOS Process

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4 Author(s)
Chun-Yu Lin ; Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan ; Shiang-Yu Tsai ; Li-Wei Chu ; Ming-Dou Ker

The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:61 ,  Issue: 2 )