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Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

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8 Author(s)
Cher Xuan Zhang ; Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA ; En Xia Zhang ; Fleetwood, D.M. ; Schrimpf, R.D.
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Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )