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Combination of focused ion beam (FIB) and transmission electron microscopy (TEM) as sub-0.25 μm defect characterization tool

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3 Author(s)
Yih-Yuh Doong ; United Microelectron. Corp., Hsinchu, Taiwan ; Jui-Mei Fu ; Yong-Fen Hsieh

A sub-0.25 μm defect characterization study was conducted by using in-line inspection machines to locate defects and focused ion beam system (FIB) equipped with a navigation tool to generate cross-sectional transmission electron microscopy (TEM) samples4-8. Two failure analysis cases regarding invisible defects in optical microscope were reported in this work. One described the micro-trench formed at the bird's beak of field oxide, and the other one illustrated the etching pit formation during Poly-Si etching process

Published in:

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Date of Conference:

21-25 Jul 1997