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Plasmon resonances and rectifying of terahertz radiation in GaN and InGaAs-based field-effect transistors

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3 Author(s)
Lin Wang ; Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China ; Weida Hu ; Xiaoshuang Chen

The plasmon resonances in GaN and InGaAs-based heterojunction field effect transistors (FETs) are investigated by using the finite-difference method in combination with finite-element solution of electron densities, potential and carrier velocities. Our results predict a resonant behavior of photoresponse in the channel of these FETs at terahertz frequencies indicating potential application of these devices in THz field. In addition, the dynamic of plasma waves in the channel is investigated in detail.

Published in:
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Date of Conference: 23-28 Sept. 2012

Page(s):
1 - 2
ISSN :
2162-2027
E-ISBN :
978-1-4673-1596-8
Print ISBN:
978-1-4673-1598-2
INSPEC Accession Number:
13192392
Conference Location :
Wollongong, NSW
Digital Object Identifier :
10.1109/IRMMW-THz.2012.6380265
Product Type:
Conference Publications

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