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ESD robustness of low-voltage/high-speed TVS devices with epitaxial grown films

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9 Author(s)
Daoheung Bouangeune ; Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea ; Woong-Ki Hong ; Sang-Sig Choi ; Chel-Jong Choi
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A transient voltage suppression (TVS) diode with abrupt junctions has been developed using the low-temperature epitaxy and process technology. The triggering voltage at 6 V could be precisely controlled by the thickness and dopant concentration. The reliability of TVS device is confirmed based on its electrostatic discharge (ESD) strength in conjunction with the transmission line pulse (TLP) test. As a result, the device could exceed 28 A TLP, ±8 kV MM, and could withstand IEC 61000-4-2 up to ±19kV. Moreover, TVS diode exhibited very low leakage current, small capacitance, fast respond time and high cut off frequency of 2nA, 60 pF, 8 ps, and 52 MHz, respectively. TVS diode can be also used for a digital communication line as well as an ESD/EMI filter attenuating the RF noise in MHz range.

Published in:

The 1st IEEE Global Conference on Consumer Electronics 2012

Date of Conference:

2-5 Oct. 2012