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Terahertz photoluminescence from GaN(Si) epitaxial layers under continuous-wave interband excitation

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4 Author(s)
Andrianova, A.V. ; A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia ; Zakhar'in, A.O. ; Bobylev, A.V. ; Feng, Z.C.

We report on terahertz emission from n-GaN films under steady state interband photoexcitation at low temperatures. The properties of the terahertz photoluminescence allow us to conclude that the emission occur under capture of nonequilibrium electrons to ionized donor centers.

Published in:

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Date of Conference:

23-28 Sept. 2012

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