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High-Gain InAs Avalanche Photodiodes

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7 Author(s)
Wenlu Sun ; Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA ; Zhiwen Lu ; Xiaoguang Zheng ; Campbell, J.C.
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We report two InAs avalanche photodiode structures with very low background doping in the depletion region. Uniform electric fields and thick depletion regions have been achieved. Excess noise measurements are consistent with k~0 and gain as high as 70 at room temperature is observed. The measured gain-bandwidth product is >; 300 GHz. All measurements are consistent with Monte Carlo simulations.

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Quantum Electronics, IEEE Journal of  (Volume:49 ,  Issue: 2 )