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Physical properties of CdTe:Cu films grown at low temperature by pulsed laser deposition

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12 Author(s)
de Moure-Flores, F. ; Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740, México D.F. 07360, Mexico ; Quinones-Galvan, J.G. ; Guillen-Cervantes, A. ; Arias-Ceron, J.S.
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CdTe:Cu films were grown by pulsed laser deposition on Corning glass slides at a substrate temperature of 300 °C. The thin films were grown using CdTe and Cu2Te powders, varying the Cu2Te concentration from 3 to 10 wt. %. The structural, compositional, optical, and electrical properties were analyzed as a function of the nominal copper concentration. X-ray diffraction shows that films have CdTe cubic phase. The compositional analysis indicates that CdTe:Cu films grown with lower Cu content have Te excess, on the other hand, films with higher Cu content have Te deficiencies. The electrical measurements showed that CdTe:Cu films grown with low Cu content present lowest resistivity.

Published in:

Journal of Applied Physics  (Volume:112 ,  Issue: 11 )