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Crystalline silicon interface passivation improvement with a-Si1-xCx:H and its application in hetero-junction solar cells with intrinsic layer

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4 Author(s)
Chang, Teng-Hsiang ; Department of Optics and Photonics, National Central University, Taoyuan, Taiwan ; Chu, Yen-Ho ; Lee, Chien-Chieh ; Chang, Jenq-Yang

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Excellent passivation of an n-type Czochralski crystalline silicon surface is made possible by the deposition of hydrogenated silicon carbide (Si1-xCx:H) layers in the electron cyclotron resonance chemical vapor deposition. We investigate the structural effect with various CH4/SiH4 dilution ratios, and the lowest effective surface recombination velocity (21.03 cm/s) that can be obtained. We also demonstrate that the Voc can be improved more than 200 mV by inserting Si1-xCx:H layers to form hetero-junction with intrinsic thin layer (HIT) solar cells. The conversion efficiency of the planar HIT solar cell with μc-Si emitter can reach 13%.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 24 )

Date of Publication:

Dec 2012

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