A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4769905

A clear visualization of the origin and characteristics of threading dislocations (TDs) of GaN-based light emitting diode epitaxial layers on (0001) sapphire substrates have been carried out. Special experimental set up and chemical etchant along with field emission scanning electron microscopy are employed to study the dynamics of GaN TDs at different growth stages. Cross-sectional transmission electron microscopy analysis visualized the formation of edge TDs is arising from extension of coalescences at boundaries of different tilting-twining nucleation grains “mosaic growth.” Etch pits as representatives of edge TDs are in agreement with previous theoretical models and analyses of TDs core position and characteristics.

Published in:
Applied Physics Letters (Volume:101 , Issue: 23 )

Date of Publication: Dec 2012

Page(s):: 231911 - 231911-5
ISSN :: 0003-6951
Digital Object Identifier :: 10.1063/1.4769905
Product Type:: Journals & Magazines

Date of Current Version :: 10 December 2012
Issue Date :: Dec 2012

Author(s)

Ravadgar, P.
Department of Photonics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
Horng, R.H. ; Ou, S.L.