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Experimental analysis of the dynamic performance of Si, GaAs and SiC Diodes

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3 Author(s)
Blinov, A. ; Dept. of Electr. Drives & Power Electron., TUT, Tallinn, Estonia ; Vinnikov, D. ; Rang, T.

This paper presents original test results using GaAs and SiC based diode structures instead of Si based fast recovery diode structures to be applied in a new voltage fed step-up DC/DC converter. Overall test results show that the GaAs diodes behave similarly to fast recovery silicon diodes assuming equal operating and cooling conditions. As expected, SiC Schottky diode was found to show a clear advantage in terms of reverse-recovery characteristics. The positive temperature coefficient of the on-state voltage drop of GaAs and SiC diodes could provide significant application advantage in high-power applications, where the parallel connection of devices is necessary.

Published in:

Electronics Conference (BEC), 2012 13th Biennial Baltic

Date of Conference:

3-5 Oct. 2012

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