Skip to Main Content
This paper presents original test results using GaAs and SiC based diode structures instead of Si based fast recovery diode structures to be applied in a new voltage fed step-up DC/DC converter. Overall test results show that the GaAs diodes behave similarly to fast recovery silicon diodes assuming equal operating and cooling conditions. As expected, SiC Schottky diode was found to show a clear advantage in terms of reverse-recovery characteristics. The positive temperature coefficient of the on-state voltage drop of GaAs and SiC diodes could provide significant application advantage in high-power applications, where the parallel connection of devices is necessary.