In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

We demonstrate the good-performance In
_0.5
Ga
_0.5
As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In
_0.5
Ga
_0.5
As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 10
⁶
cm
^-2
. The performance of the MOSCAPs is comparable to that of In
_0.53
Ga
_0.47
As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density D
_it
values of 5 × 10
¹¹
-2 × 10
¹²
eV
^-1
· cm
^-2
in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In
_0.5
Ga
_0.5
As/GaAs MOSCAPs obtained by conductance methods were shown.