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High-Pulse-Performance Diode-Pumped Actively Q-Switched c-cut \hbox {Nd:Lu}_{0.1}\hbox {Y}_{0.9}\hbox {VO}_{4} Self-Raman Laser

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4 Author(s)
Yongguang Zhao ; State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China ; Zhengping Wang ; Haohai Yu ; Xinguang Xu

We demonstrated 1175-nm acousto-optic (A-O) Q-switched self-Raman laser performance of a-cut and c-cut mixed vanadate crystals, Nd:Lu0.1Y0.9VO4 , for the first time. With a large pump beam radius of 800 μm , the thermal effect was effectively mitigated, and the maximum average output powers of a-cut and c-cut samples were 1.85 and 1.52 W, corresponding to conversion efficiencies of 11.9% and 10.1%, respectively. Combining the advantages of mixed vanadate crystal and c-cut orientation, the c-cut Nd:Lu0.1Y0.9VO4 crystal exhibited prominent self-Raman laser characteristics, such as 101-μJ single pulse energy, 1.3-ns pulsewidth, and 78-kW peak power.

Published in:

IEEE Photonics Journal  (Volume:4 ,  Issue: 6 )