High-Pulse-Performance Diode-Pumped Actively Q-Switched c-cut $\hbox{Nd:Lu}_{0.1}\hbox{Y}_{0.9}\hbox{VO}_{4}$ Self-Raman Laser

We demonstrated 1175-nm acousto-optic (A-O) Q-switched self-Raman laser performance of a-cut and c-cut mixed vanadate crystals, Nd:Lu
_0.1
Y
_0.9
VO
₄
, for the first time. With a large pump beam radius of 800 μm , the thermal effect was effectively mitigated, and the maximum average output powers of a-cut and c-cut samples were 1.85 and 1.52 W, corresponding to conversion efficiencies of 11.9% and 10.1%, respectively. Combining the advantages of mixed vanadate crystal and c-cut orientation, the c-cut Nd:Lu
_0.1
Y
_0.9
VO
₄
crystal exhibited prominent self-Raman laser characteristics, such as 101-μJ single pulse energy, 1.3-ns pulsewidth, and 78-kW peak power.