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Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

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3 Author(s)
Hung-Yu Tai ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Yung-Hsiang Lin ; Gong-Ru Lin

Yellow electroluminescence (EL) of a 20-pair Si-rich SiNx /SiOx superlattice is demonstrated by plasma-enhanced chemical vapor deposition (PECVD) and annealing process. After annealing at 900°C for 30 min, two photoluminescence (PL) peaks at 480 and 570 nm are observed to blue-shift the PL wavelength, and the corresponding peak intensity is enhanced due to the self-aggregation of Si quantum dots (QDs). When increasing the annealing temperature to 1050°C , the PL peaks caused by the aggregated Si-QDs in SiNx and SiOx layers red-shift to 500 and 600 nm, thereby shifting the PL peak wavelength to 520 nm. Such a wavelength red-shifting phenomenon is mainly attributed to the formation of large Si-QDs due to the Ostwald ripening effect. The turn-on voltage and the V-I slope of the ITO/SiNx/SiOx/p-Si/Al LED device are 200 V and 15.5 kV/mA with Fowler-Nordheim (FN) tunneling assistant carrier transport under an effective barrier height of 1.3 eV. Maximum output-power-current slope of 0.2 μW/A at power conversion efficiency of 10-6 is detected.

Published in:

Photonics Journal, IEEE  (Volume:5 ,  Issue: 1 )