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Transport in Graphene: Studying Layers of BN, SiC, and SiO2

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1 Author(s)
Ferry, D.K. ; Sch. of Electr., Arizona State Univ., Tempe, AZ, USA

We will examine the mobility and high-field velocity in graphene placed upon various substrates, such as boron nitride (BN), silicon carbide (SiC), or silicon dioxide (SiO2). The transport is subject to the intrinsic phonons in graphene as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and graphene that dominate the mobility and velocity.

Published in:

Nanotechnology Magazine, IEEE  (Volume:6 ,  Issue: 4 )