By Topic

High-Mobility Solution-Processed Amorphous Indium Zinc \hbox {O\xide/In}_{2}\hbox {O}_{3} Nanocrystal Hybrid Thin-Film Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
ChunLan Wang ; Dept. of Phys., Wuhan Univ., Wuhan, China ; XingQiang Liu ; XiangHeng Xiao ; YueLi Liu
more authors

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2·V-1·s-1 and an on-off ratio of 107 , which were obtained at 1 mol% In2O3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )