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High-Mobility Solution-Processed Amorphous Indium Zinc \hbox {O\xide/In}_{2}\hbox {O}_{3} Nanocrystal Hybrid Thin-Film Transistor

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8 Author(s)
ChunLan Wang ; Dept. of Phys., Wuhan Univ., Wuhan, China ; XingQiang Liu ; XiangHeng Xiao ; YueLi Liu
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High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2·V-1·s-1 and an on-off ratio of 107 , which were obtained at 1 mol% In2O3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )

Date of Publication:

Jan. 2013

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