High-Mobility Solution-Processed Amorphous Indium Zinc $\hbox{Oxide/In}_{2}\hbox{O}_{3}$ Nanocrystal Hybrid Thin-Film Transistor

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In
₂
O
₃
NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm
²
·V
^-1
·s
^-1
and an on-off ratio of 10
⁷
, which were obtained at 1 mol% In
₂
O
₃
NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.