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Ultra wideband cascaded low noise amplifier implemented in 100-nm GaAs metamorphic-HEMT technology

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3 Author(s)
Aleksey Dyskin ; Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa, Israel ; Dan Ritter ; Ingmar Kallfass

We present a state-of-the-art broadband (60 to 90 GHz, 40%) 4-stage low noise amplifier (LNA) in a GaAs metamorphic high electron mobility transistor (mHEMT) technology. The LNA, spanning several waveguide bands, is dedicated to radiometry, communication and instrumentation applications. It consumes 56 mW and exhibits a gain of more than 19 dB with flat frequency response and average noise figure of 2.5 dB. The design makes use of reactive feedback by source degeneration. Broadband matching was achieved by using enhanced L-C matching networks. Gate width was optimized for best noise figure and gain performance.

Published in:

Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on

Date of Conference:

3-5 Oct. 2012