By Topic

Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium \hbox {n}^{+}/\hbox {p} Junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

14 Author(s)
Jaewoo Shim ; Sch. of Electron. & Electr. Eng., Sungkyunkwan Univ., Suwon, South Korea ; Song, I. ; Jung, W.-S. ; Nam, J.
more authors

In this letter, we investigate the electrical behavior of vacancy VGe defects in Ge at various thermal annealing conditions through electrochemical capacitance-voltage analysis. Then, the effects of the annealing process on Ge n+/p junction diodes were also studied with J-V, transmission electron microscopy, and secondary ion mass spectroscopy measurements in the aspects of point-defect healing and dopant diffusion/loss phenomena. The VGe defects tend to heal by recombining with Ge interstitial atoms as the annealing process temperature increases. However, the diffusion/loss problems of P atoms in Ge become severe at above 500°C. Therefore, an optimal postfabrication annealing process at 600°C is proposed in terms of point-defect healing and dopant diffusion/loss reduction.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 1 )