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In this letter, we investigate the electrical behavior of vacancy VGe defects in Ge at various thermal annealing conditions through electrochemical capacitance-voltage analysis. Then, the effects of the annealing process on Ge n+/p junction diodes were also studied with J-V, transmission electron microscopy, and secondary ion mass spectroscopy measurements in the aspects of point-defect healing and dopant diffusion/loss phenomena. The VGe defects tend to heal by recombining with Ge interstitial atoms as the annealing process temperature increases. However, the diffusion/loss problems of P atoms in Ge become severe at above 500°C. Therefore, an optimal postfabrication annealing process at 600°C is proposed in terms of point-defect healing and dopant diffusion/loss reduction.