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A 0.13- \mu{\hbox {m}} SiGe BiCMOS Colpitts-Based VCO for W -Band Radar Transmitters

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4 Author(s)
Sapone, G. ; Dipt. di Ing. Elettr., Elettron. e Inf., Univ. di Catania, Catania, Italy ; Ragonese, E. ; Italia, A. ; Palmisano, G.

This paper presents a Colpitts-based voltage-controlled oscillator (VCO) for W-band radar applications. In the proposed circuit, the oscillation signal is directly drawn from the switching transistor bases by means of the primary winding of a transformer tank, while the secondary winding drives the output buffer. This solution improves both tuning range and oscillation swing with respect to traditional millimeter-wave VCO topologies without increasing power supply. The oscillator is implemented in a 0.13-μm SiGe BiCMOS technology, along with high-frequency dividers to enable low-frequency testing. The VCO exhibits a phase noise of -99.3 dBc/Hz at 1-MHz offset from an oscillation frequency of 76 GHz and a tuning range of 4.9% with a consumption of 65 mW at 2.5-V power supply. The VCO is also used to drive a two-stage power amplifier in a fully integrated W-band transmitter that is able to deliver an overall output power as high as 15 dBm at 76 GHz.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:61 ,  Issue: 1 )

Date of Publication:

Jan. 2013

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