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This letter reports wafer-bonded p-n heterojunction diodes, which consist of GaAs and chemomechanically polished N-polar GaN. The measured I-V and C-V show well-behaved p-n junction characteristics. The built-in voltage extrapolated from the C-V is 0.2 V less than the theoretical, suggesting the existence of interface states. However, this offset is much less than that (1.14 V) reported of wafer-bonded GaAs/Ga-polar GaN p-n diodes. The limited maximum current suggests pinning of the Fermi level at interface traps near the conduction band accessed under forward bias. Yet, this junction shows promise as a collector junction for wafer-bonded devices to achieve higher breakdown voltages.